Switching Characteristics of an Asymmetrical Complementary 4H-SiC Gate Turn- Off (GTO) Thyristor
نویسندگان
چکیده
This work is partially supported by US Office of Naval Research grant N00014-96-1-0926 Abstract The switching characteristics of 4H-SiC asymmetric GTO thyristors are studied and compared to Si based IGBTs, MCTs, and MOSFETs. Forward current density, turn-off time and forward blocking voltage parameters are matched for the various switching devices. From the measurements, the necessary parameters were extracted to develop a simple PSPICE circuit model for the SiC GTO. The simulated response of the model is compared to the experimental response of the device.
منابع مشابه
TYPE N / A 3 . DATES COVERED - 4 . TITLE AND SUBTITLE 20 kV , 2 cm 2 , 4 H - SIC Gate Turn -
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